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| BUK7E07-55B N-channel TrenchMOS standard level FET Rev. 01 -- 29 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in Automotive critical applications. 1.2 Features I Very low on-state resistance I 175 C rated I Q101 compliant I Standard level compatible 1.3 Applications I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V and 24 V loads 1.4 Quick reference data I EDS(AL)S 351 mJ I ID 75 A I RDSon = 5.8 m (typ) I Ptot 203 W 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain (D) mbb076 Simplified outline mb Symbol D G S 123 SOT226 (I2PAK) NXP Semiconductors BUK7E07-55B N-channel TrenchMOS standard level FET 3. Ordering information Table 2. Ordering information Package Name BUK7E07-55B I2PAK Description Version plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226 Type number 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage (DC) gate-source voltage drain current Tmb = 25 C; VGS = 10 V; see Figure 2 and 3 Tmb = 100 C; VGS = 10 V; see Figure 2 IDM Ptot Tstg Tj IDR IDRM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature reverse drain current peak reverse drain current non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s Unclamped inductive load; ID = 75 A; VDS 55 V; VGS = 10 V; RGS = 50 ; starting at Tj = 25 C Repetitive rating defined in Figure 16 [3] [2] [1] [2] [2] Conditions RGS = 20 k Min Max 55 55 20 119 75 75 478 203 Unit V V V A A A A W Tmb = 25 C; pulsed; tp 10 s; see Figure 3 Tmb = 25 C; see Figure 1 -55 +175 C -55 +175 C 75 478 351 A A mJ Source-drain diode Avalanche ruggedness EDS(AL)R - - J [1] [2] [3] Current is limited by chip power dissipation rating. Continuous current is limited by package. Conditions: a) Maximum value not quoted. b) Single-pulse avalanche rating limited by Tj(max) of 175 C. c) Repetitive avalanche rating limited by an average junction temperature of 170 C. d) Refer to application note AN10273 for further information. BUK7E07-55B_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 29 January 2008 2 of 12 NXP Semiconductors BUK7E07-55B N-channel TrenchMOS standard level FET 120 Pder (%) 80 003aab844 120 ID (A) 80 (1) 003aac120 40 40 0 0 50 100 150 Tmb (C) 200 0 0 50 100 150 Tmb (C) 200 P tot P der = ----------------------- x 100 % P tot ( 25C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature 103 ID (A) 102 (1) VGS 10 V (1) Capped at 75 A due to package. Fig 2. Continuous drain current as a function of mounting base temperature 003aac121 Limit RDSon = VDS / ID tp = 10 s 100 s 1 ms 10 10 ms DC 100 ms 1 10-1 1 10 VDS (V) 102 Tmb = 25 C; IDM is single pulse. (1) Capped at 75 A due to package. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7E07-55B_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 29 January 2008 3 of 12 NXP Semiconductors BUK7E07-55B N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 4. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions vertical in still air Min Typ 60 Max 0.74 Unit K/W K/W thermal resistance from junction to mounting base - 1 Zth(j-mb) (K/W) 10-1 = 0.5 0.2 0.1 0.05 0.02 10-2 single pulse P 003aac122 = tp T tp t T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7E07-55B_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 29 January 2008 4 of 12 NXP Semiconductors BUK7E07-55B N-channel TrenchMOS standard level FET 6. Characteristics Table 5. Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS Parameter Conditions Min Typ Max Unit Static characteristics drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain leakage current VDS = 55 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate leakage current VGS = 20 V; VDS = 0 V Tj = 25 C Tj = 175 C Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf LD LS total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance measured from drain lead 6 mm from package to centre of die measured from source lead to source bond pad Source-drain diode VSD trr Qr source-drain voltage reverse recovery time recovered charge IS = 25 A; VGS = 0 V; see Figure 15 IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VR = 30 V 0.85 62 60 1.2 V ns nC VDS = 30 V; RL = 1.2 ; VGS = 10 V; RG = 10 VGS = 0 V; VDS = 25 V; f = 1 MHz; see Figure 12 ID = 25 A; VDS = 44 V; VGS = 10 V; see Figure 14 53 12 17 2820 554 200 24 52 77 41 4.5 7.5 3760 665 274 nC nC nC pF pF pF ns ns ns ns nH nH drain-source on-state resistance VGS = 10 V; ID = 25 A; see Figure 6 and 8 5.8 7.1 14.2 m m 0.02 2 1 500 100 A A nA 2 1 3 4 4.4 V V V 55 50 V V BUK7E07-55B_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 29 January 2008 5 of 12 NXP Semiconductors BUK7E07-55B N-channel TrenchMOS standard level FET 300 20 10 ID (A) 200 9.0 VGS (V) = 8.5 003aac123 25 RDSon (m) 20 003aac124 8.0 7.5 7.0 6.5 100 6.0 5.5 5.0 4.5 0 0 2 4 6 8 10 VDS (V) 0 5 10 15 VGS (V) 20 5 10 15 Tj = 25 C Tj = 25 C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 25 RDSon (m) 20 VGS (V) = 6.0 6.5 7.0 7.5 8.0 15 9.0 003aac125 Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values 2 a 003aab906 1.5 1 10 10 0.5 5 0 0 100 200 ID (A) 300 0 -60 0 60 120 Tj (C) 180 Tj = 25 C R DSon a = ----------------------------R DSon ( 25C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 7. Drain-source on-state resistance as a function of drain current; typical values BUK7E07-55B_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 29 January 2008 6 of 12 NXP Semiconductors BUK7E07-55B N-channel TrenchMOS standard level FET 5 VGS(th) (V) 4 max 003aab852 10-1 ID (A) 10-2 min typ 003aab853 max 3 typ 10-3 2 min 10-4 1 10-5 0 -60 10-6 0 60 120 Tj (C) 160 0 2 4 VGS (V) 6 ID = 1 mA; VDS = VGS Tj = 25 C; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature 60 gfs (S) 40 003aac126 Fig 10. Sub-threshold drain current as a function of gate-source voltage 4 C (nF) 3 003aac127 Ciss 2 Coss 20 1 Crss 0 0 25 50 75 ID (A) 100 0 10-2 10-1 1 10 VDS (V) 102 Tj = 25 C; VDS = 25 V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK7E07-55B_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 29 January 2008 7 of 12 NXP Semiconductors BUK7E07-55B N-channel TrenchMOS standard level FET 100 ID (A) 75 003aac128 10 VGS (V) 8 VDD = 14 V 003aac129 VDD = 44 V 6 50 4 25 Tj = 175 C Tj = 25 C 2 0 0 2 4 6 VGS (V) 8 0 0 20 40 QG (nC) 60 VDS = 25 V Tj = 25 C; ID = 25 A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values 100 IS (A) 75 003aac130 Fig 14. Gate-source voltage as a function of gate charge; typical values 102 IAL (A) 10 (2) 003aac131 (1) 50 Tj = 175 C 25 Tj = 25 C 1 (3) 0 0.0 0.5 1.0 VSD (V) 1.5 10-1 10-3 10-2 10-1 1 tAL (ms) 10 VGS = 0 V See Table note 3 of Table 3 Limiting values. (1) Single-pulse; Tj = 25 C. (2) Single-pulse; Tj = 150 C. (3) Repetitive. Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values Fig 16. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time BUK7E07-55B_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 29 January 2008 8 of 12 NXP Semiconductors BUK7E07-55B N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226 A D1 E A1 mounting base D L1 Q b1 L 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.40 1.27 b 0.85 0.60 b1 1.3 1.0 c 0.7 0.4 D max 11 D1 1.6 1.2 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 2.79 Q 2.6 2.2 OUTLINE VERSION SOT226 REFERENCES IEC JEDEC low-profile 3-lead TO-220AB JEITA EUROPEAN PROJECTION ISSUE DATE 05-06-23 06-02-14 Fig 17. Package outline SOT226 (I2PAK) BUK7E07-55B_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 29 January 2008 9 of 12 NXP Semiconductors BUK7E07-55B N-channel TrenchMOS standard level FET 8. Revision history Table 6. Revision history Release date 20080129 Data sheet status Product data Change notice Supersedes Document ID BUK7E07-55B_1 BUK7E07-55B_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 29 January 2008 10 of 12 NXP Semiconductors BUK7E07-55B N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of NXP B.V. 10. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BUK7E07-55B_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 29 January 2008 11 of 12 NXP Semiconductors BUK7E07-55B N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 29 January 2008 Document identifier: BUK7E07-55B_1 |
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